View IRKTF82-08HNN_1256767.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Bulletin I27103 rev. A 09/97
IRK.F82.. SERIES
FAST THYRISTOR/ DIODE and THYRISTOR/ THYRISTOR INT-A-paka Power Modules
Features
Fast turn-off thyristor Fast recovery diode High surge capability Electrically isolated baseplate 3000 V RMS isolating voltage Industrial standard package UL E78996 approved
81 A
Description
These series of INT-A-pak modules are intended for applications such as self-commutated inverters, DC choppers, electronic welders, induction heating and others where fast switching characteristics are required.
Major Ratings and Characteristics
Parameters
I T(AV) @ TC I T(RMS) I TSM @ 50Hz @ 60Hz It
2
IRK.F82..
81 90 180 2200 2300 24.2 22.1 242
Units
A C A A A KA 2s KA 2s KA 2s s s V
o
@ 50Hz @ 60Hz
I 2t tq t rr VDRM / V RRM TJ range range
10 and 15 2 up to 800 - 40 to 125
C
www.irf.com
1
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
ELECTRICAL SPECIFICATIONS Voltage Ratings
Voltage Type number Code
04 IRK.F82.. 08
VRRM/VDRM, maximum repetitive peak reverse voltage V
400 800
VRSM , maximum nonrepetitive peak rev. voltage V
400 800
IRRM/I DRM max.
@ T J = 125C
mA
30
Current Carrying Capacity
ITM 180 el 50Hz 400Hz 2500Hz 5000Hz 10000Hz Recovery voltage Vr Voltage before turn-on Vd Rise of on-state current di/dt Case temperature Equivalent values for RC circuit 50 90 160 200 150 135 90 50 80% VDRM 50 60 90 265 320 240 215 160 50
o
Frequency f
ITM 180 el
o
ITM 100s
Units
250 290 260 235 190 50
400 475 400 355 275 50
2240 1070 370 235 50
3100 1550 550 355 50
A A A A A V V
80% VDRM 60 90
80% VDRM 60
A/ s C
22 / 0.15 F
22 / 0.15 F
22 / 0.15 F
On-state Conduction
Parameter
IT(AV) Maximum average on-state current @ Case temperature IT(RMS) Maximum RMS current ITSM Maximum peak, one-cycle, non-repetitive surge current
IRK.F82..
81 90 180 2200 2300 1850 1950
Units Conditions
A C A A TC = 90C, as AC switch t = 10ms t = 8.3ms t = 10ms t = 8.3ms KA2 s t = 10ms t = 8.3ms t = 10ms t = 8.3ms No voltage reapplied 100% VRRM reapplied No voltage reapplied 100% VRRM reapplied Sinusoidal half wave, Initial TJ = 125C 180 conduction, half sine wave
I2 t
Maximum I2 t for fusing
24.2 22.1 17.1 15.6
I2 t
Maximum I2 t for fusing
242 1.20 1.24 2.18 2.00 1.96 600 1000
KA 2s t = 0 to 10ms, no voltage reapplied V (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. mW (16.7% x x I T(AV) < I < x I T(AV)), TJ = TJ max. (I > x I T(AV)), TJ = TJ max. V mA mA Ipk = 350A, T J = T J max., tp = 10ms sine pulse TJ = 25C, IT > 30 A TJ = 25C, VA = 12V, Ra = 6, Ig = 1A
VT(TO)1 Low level value of threshold voltage VT(TO)2 High level value of threshold voltage r t1 r t2 VTM IH IL Low level value of on-state slope resistance High level value of on-state slope resistance Maximum on-state voltage drop Maximum holding current Typical latching current
2
www.irf.com
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Switching
Parameter
di/dt Maximum non-repetitive rate of rise
IRK.F82..
800
Units Conditions
A/s Gate drive 20V, 20, tr 1ms, VD= 80% VDRM T J = 25C ITM = 350A, di/dt = -25A/s, VR = 50V, TJ = 25C ITM = 350A, T J = 125C, di/dt = -25A/s, s VR = 50V, dv/dt = 400V/s linear to 80% V DRM
trr tq
Maximum recovery time Maximum turn-off time N 10
2 L 15
s
Blocking
Parameter
dv/dt Maximum critical rate of rise of off-state voltage VINS IRRM IDRM RMS isolation voltage Maximum peak reverse and off-state leakage current 3000 30 V mA 50 Hz, circuit to base, TJ = 25C, t = 1 s TJ = 125C, rated VDRM/VRRM applied
IRK.F82..
1000
Units Conditions
V/s TJ = 125C., exponential to = 67% VDRM
Triggering
Parameter
P GM P G(AV) IGM - VGM IGT V GT IGD V GD Maximum peak gate power Maximum peak average gate power Maximum peak positive gate current Maximum peak negative gate voltage Max. DC gate current required to trigger DC gate voltage required to trigger DC gate current not to trigger DC gate voltage not to trigger
IRK.F82..
40 2 5 5 200 3 20 0.25
Units Conditions
W W A V mA V mA V TJ = 125C, rated VDRM applied TJ = 25C, Vak 12V, Ra = 6 f = 50 Hz, d% = 50 TJ = 125C, f = 50Hz, d% = 50 TJ = 125C, tp < 5ms
Thermal and Mechanical Specifications
Parameter
TJ T stg RthJC Max. junction operating temperature range Max. storage temperature range Max. thermal resistance, junction to case RthC-hs Max. thermal resistance, case to heatsink T Mounting torque 10% IAP to heatsink busbar to IAP wt Approximate weight 4 - 6 (35 - 53) 4 - 6 (35 - 53) 500 (17.8) Nm 0.035 K/W Mounting surface flat and greased Per module
A mounting compound is recommended. The torque should be rechecked after a period of 3 hours to allow for the spread of the compound. Use of cable lugs is (lb*in) not recommendd, busbars should be used and restrained during tightening. Threads must be g (oz) lubricated with a compound
IRK.F82..
- 40 to 125 - 40 to 150 0.25
Units Conditions
C
K/W
Per junction, DC operation
www.irf.com
3
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
RthJC Conduction
(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)
Conduction angle
180 120 90 60 30
Sinusoidal conduction Rectangular conduction
0.016 0.019 0.024 0.035 0.060 0.011 0.020 0.026 0.037 0.060
Units
K/W
Conditions
TJ = 125C
Ordering Information Table
Device Code
IRK
1 1 2 3 4 5 - Module type - Circuit configuration - Fast SCR
T
2
F
3
8
4
2
5
-
08
6
H
7
L
8
N
8
- Current rating: IT(AV) x 10 rounded - 1= 2= option with spacers and longer terminal screws option with standard terminal screws
6 7 8
- Voltage code: Code x 100 = VRRM (See Voltage Ratings Table) - dv/dt code: H 400V/s - tq code: N 10s L 15s - None = Standard devices N = Aluminum nitrade substrate
9
NOTE: To order the Optional Hardware see Bulletin I27900
4 www.irf.com
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Outline Table
- All dimensions in millimeters (inches) - Dimensions are nominal - Full engineering drawings are available on request - UL identification number for gate and cathode wire: UL 1385 - UL identification number for package: UL 94V0
For all types IRK...1 IRK...2
A 25 (0.98) 23 (0.91)
B ---30 (1.18)
C ---36 (1.42)
D 41 (1.61) ----
E 47 (1.85) ----
IRKTF..
IRKHF..
IRKLF..
IRKUF..
IRKVF..
IRKKF..
IRKNF..
Maximum Allowable Case Temperature (C)
Maximum Allowable Case Temperature (C)
130 120 110
Conduction Angle
130 120 110
IRK.F82.. Series R thJC (DC) = 0.25 K/W
IRK.F82.. Series R thJC (DC) = 0.25 K/W
Conduction Period
100 90 80 70 0 20 40 60 80 100 Average On-state Current (A) 30
100 90 80 70 0 20 40 60 80 100 120 140 Average On-state Current (A) 30 60 90 120 180 DC
60 90 120 180
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
www.irf.com
5
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Maximum Average On-state Power Loss (W)
Max imum Average On-state Power Loss (W) 140 120 100 80 60
Conduction Angle
200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 Average On-state Current (A) IRK.F82.. Series Per Junction T J = 125C RMS Limit
Conduction Period
180 120 90 60 30 RMS Limit
DC 180 120 90 60 30
40 20 0 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A) IRK.F82.. Series Per Junction T J = 125C
Fig. 3 - On-state Power Loss Characteristics
2000 1900 1800 1700 1600 1500 1400 1300 1200 1100 1000 900 1 10 100
Number Of Equal Amplitude Half Cycle Curre nt Pulses (N)
Fig. 4 - On-state Power Loss Characteristics
2200 2000 1800 1600 1400 1200 1000 IRK.F82.. Series Per Junction 0.1 Pulse Train Duration (s) 1
At Any Rated Load Condition And With Rated V RRMApplied Following Surge. Initial T J = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s
Peak Half Sine Wave On-state Current (A)
Peak Half Sine Wave On-state Current (A)
Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. Initial T J = 125C No Voltage Reapplied Rated VRRMReapplied
IRK.F82.. Series Per Junction
800 0.01
Fig. 5 - Maximum Non-Repetitive Surge Current
10000 Instantaneous On-state Current (A)
Fig. 6 - Maximum Non-Repetitive Surge Current
1 Steady State Value R thJC= 0.25 K/W (DC Operation) 0.1
T J = 25C T J = 125C
1000
Transient Thermal Impedance Z thJC(K/W)
0.01
IRK.F82.. Series Per Junction 100 1 2 3 4 5 6 7 8 Instantaneous On-state Voltage (V)
IRK.F82.. Series Per Junction 0.001 0.001 0.01 0.1 1 10 100
Square Wave Pulse Duration (s)
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Thermal Impedance ZthJC Characteristic
6
www.irf.com
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
Maximum Reverse Recovery Charge - Qrr (C) 160 140 120 100
100 A
IRK.F82.. Series T J = 125 C
ITM = 500 A
Maximum Reverse Recovery Current - Irr (A)
120 110 100 90 80 70 60 50 40 30 20 10 10 20 30 40 50 60 70 80 90 100
50 A
IRK.82.. Series T J= 125 C
I TM = 500 A 300 A 200 A 100 A
300 A 200 A
80 60
50 A
40 20 10
20
30
40
50
60
70
80
90 100
Rate Of Fall Of On-state Current - di/dt (A/s)
Rate Of Fall Of On-state Current - di/dt (A/s)
Fig. 9 - Reverse Recovery Charge Characteristic
1E4
IRK.F82.. Series Sinusoidal Pulse T C = 60 C Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
Fig. 10 - Reverse Recovery Current Characteristic
Peak On-state Current (A)
tp
tp
IRK.F82.. Series Sinusoidal Pulse T C = 90 C
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
1E3
1000 2500 5000
400
150
50 Hz
150 50 Hz
1000 2500 5000
400
1E2 1E1
1E2
1E3
1E4 1E1 1E4 E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 11 - Frequency Characteristics
1E4
IRK.F82.. Series Trapezoidal Pulse T C = 60 C, di/dt 50A/s Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
IRK.F82.. Series Trapezoidal Pulse T = 60 C, di/dt 100A/s
C
Peak On-state Current (A)
tp
tp
Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
1E3
400
50 Hz 150 1000 2500 5000
5000 2500 1000 400 150
50 Hz
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 12 - Frequency Characteristics
www.irf.com
7
IRK.F82.. Series
Bulletin I27103 rev. A 09/97
1E4
IRK.F82.. Series Trapezoidal Pulse T C = 90 C, di/dt 50A/s Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
IRK.F 82.. Series Trapezoidal Pulse T C = 90 C, di/dt 100A/s Snubber circuit R s = 22 ohms C s = 0.15 F V D = 80% V DRM
Peak On-state Current (A)
tp
tp
1E3
150 400 1000 2500
5000
50 Hz
50 Hz
1000 2500 5000
400
150
1E2 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 13 - Frequency Characteristics
1E4
10 joules per pulse
Peak On-state Current (A)
2.5
5
2.5 5
10 joules per pulse
1E3
0.5 0.25 0.1 0.05 0.01
1
1 0.5 0.25 0.1 0.05
1E2
IRK.F82.. Series Trapezoidal Pulse di/dt 50A/s
tp
IRK.F82.. Series Sinusoidal pulse
tp
1E1 1E1
1E2
1E3
1E4 1E1 1E4 1E1
1E2
1E3
1E4
Pulse Basewidth (s)
Pulse Basewidth (s)
Fig. 14 - Maximum On-state Energy Power Loss Characteristics
100 Instantaneous Gate Voltage (V)
Rectangular gate pulse a) Recommended load line for rated di/dt : 20 V, 10 ohms tr<=1 s b) Recommended load line for <=30% rated di/dt : 10 V, 10 ohms 10 tr<=1 s (a) (b)
Tj=-40 C Tj=25 C
(1) PGM = 10W, tp = 10ms (2) PGM = 20W, tp = 5ms (3) PGM = 40W, tp = 2.5ms
Tj=125 C
1 VGD IGD 0.1 0.01
(1)
(2)
(3)
IRK.F82.. Series 0.1 1
Frequency Limited by PG(AV) 10 100
Instantaneous Gate Current (A)
Fig. 15 - Gate Characteristics
8
www.irf.com

▲Up To Search▲

Price & Availability of IRKTF82-08HNN

	To Download IRKTF82-08HNN Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .